IRF6641TR1PBF Datasheet, MOSFET, International Rectifier

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IRF6641TR1PBF Features and benefits

M ID, Drain-to-Source Current (A) 7.0V BOTTOM 10 10 7.0V 1 ≤60µs PULSE WIDTH Tj = 25°C 1 0.1 1 VDS, Drain-to-Source Voltage (V) 10 0.1 0.1 ≤60µs PULSE WIDTH Tj = .

IRF6641TR1PBF Application

PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .

IRF6641TR1PBF Description

The IRF6641PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET pack.

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